Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz  

作　　者：刘思雨 祝杰杰 郭静姝 程凯 宓珉瀚 秦灵洁 张博文 唐旻 马晓华 Si-Yu Liu;Jie-Jie Zhu;Jing-Shu Guo;Kai Cheng;Min-Han Mi;Ling-Jie Qin;Bo-Wen Zhang;Min Tang;Xiao-Hua Ma(Key Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China;Enkris Semiconductor,Inc.,Suzhou 215123,China;State Key Discipline Laboratory of Radio Frequency Heterogeneous Interation,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]Key Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Enkris Semiconductor,Inc.,Suzhou 215123,China [3]State Key Discipline Laboratory of Radio Frequency Heterogeneous Interation,Shanghai Jiao Tong University,Shanghai 200240,China

出　　处：《Chinese Physics B》2023年第11期570-574,共5页中国物理B（英文版）

基　　金：Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403);the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014)。

摘　　要：This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N/Ga N HEMT. An RF E-mode device with 2.9-nm-thick Al N barrier layer fabricated by remote plasma oxidation(RPO) treatment at 300℃. The device with a gate length of 0.12-μm has a threshold voltage(Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1×108, and a 440-m S/mm peak transconductance. During continuous wave(CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode Al N/Ga N HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode Al N/Ga N HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.

关 键 词：GAN low damage enhancement mode power-added efficiency 

分 类 号：TN386[电子电信—物理电子学]