射频宽带、低噪声单片放大器设计  

A Wide-band and Low-noise RFIC Amplifier Design

作　　者：孟令琴[1] 于文震[1] 费元春[2] 

机构地区：[1]南京电子技术研究所,南京210013 [2]北京理工大学电子工程系,北京100081

出　　处：《微波学报》2005年第B04期127-129,共3页Journal of Microwaves

摘　　要：本文介绍一种宽带、低相位噪声射频集成放大器设计，采用负反馈频率补偿技术，通过优化设计反馈网络电阻及电容值，有效地展宽了工作频带；采用了封装电容做级间匹配电容，提高了电路模型精度增加了流片的可实现性；通过级间匹配电容，有效地补偿了带内平坦度。电路结构简单，性能优良，在0．8μm SiGe BiCMOS工艺上实现的放大器3dB带宽0～7．5GHz，将广泛应用于光纤通信、软件无线电、雷达及通信一体化接收前端。In the paper it is introduced A Wide-band and Low-noise IC Amplifier Design for RF. Based on negative feedback principle, by using resistance and capacitance, through CAD optimization and turning, effectively extended frequency band. By using encapsulation capacity as matching , increased the precision of the circuit model and realization of chip. By matching capacity gained bandpass flatness. The circuit structure is simple and high performance. Gained 3dB band 0-7.5GHz based on 0.8μm SiGe BiCMOS （AMS Company）. It is widely used in Optical Fiber Communication, software wireless, Radar and Communication system integration in Receiver.

关 键 词：负反馈 频率补偿技术 电路模型 

分 类 号：TN722[电子电信—电路与系统]