一个新的单异质结InGaP/GaAs HBT模型  

A New Single-heterojunction InGaP/GaAs HBT Model

作　　者：刘军[1] 孙玲玲[1] 

机构地区：[1]杭州电子科技大学微电子CAD所,杭州310018

出　　处：《微波学报》2006年第3期40-44,共5页Journal of Microwaves

基　　金：国防科技重点实验室基金(No.51491010105DZ0401);浙江省重大国际合作项目(No.2004C14004)资助课题

摘　　要：对VB IC B JT模型用于Ⅲ-V族化合物HBT器件建模的可行性进行了讨论和借鉴,结合UCSD HBT模型优点,提出一个新的可精确用于单异质结InGaP/GaAsHBT模型,并用于该类器件建模。测量和模型仿真I-V特性及多偏置条件下多频率点S参数对比结果表明,DC^20GHz频率范围内,新模型可对单、多指InGaP/GaAs HBT器件交流小信号特性进行精确表征。运用所建模型准确的预见了一宽带放大器性能。The applicability of simplified VBIC BJT model for Ⅲ-Ⅴ compound HBTs modeling is discussed and referenced. Based on VBIC and UCSD HBT model, a new model which can accurately accounts for single - heterojunction InGaP/GaAs HBTs＇ device is presented and used. Compared results between measured and simulated data verified that, within the frequency range from 50MHz to 20GHz,the model is suitable for single and multi-finger InGaP/GaAs HBTs＇ AC smallsignal characterizations＇ representation. Using this model, a wideband amplifier＇ s behavior is previowed accurately.

关 键 词：VBIC模型 UCSD模型 INGAP/GAAS HBT模型 宽带放大器 

分 类 号：TN322.8[电子电信—物理电子学]