TFEL器件发光层的电场随外电压的变化  

THE DEPENDENCE OF FIELD ON APPLIED VOLTAGE IN TFEL DEVICE

作　　者：滕枫 娄志东 徐征 候延冰 

机构地区：[1]南开大学物理系,天津300071

出　　处：《发光学报》1996年第4期337-340,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目

摘　　要：本文利用弗朗兹-凯尔迪效应研究了TFEL器件发光层中的电场随外加电压的变化。用此方法算得的发光层中的电场同把器件各层当作只起绝缘作用的电介质时算得的电场强度,虽然数量级相同,但数值上有差别,特别当外加电压达到发光阈值电压时,差别更为明显。In this paper, The field in the phosphor of a TFEL device vs. applied voltage characteristic is investigated by Franz-Keldysh effect. The field strength in the phosphor calculated using this method has difference in numerical value compared with that estimated by the methods of every layer only acting as insulating layer though they are in the same order. The difference is even bigger at the threshold voltage.

关 键 词：电致发光 TFEL器件 电场 电压 

分 类 号：TN383.1[电子电信—物理电子学]