化学浴沉积法制备ZnS薄膜  

A study of Preparation of ZnS Films by the Method of Chemical Bath Deposition

作　　者：王应民[1] 张萌[1] 徐鹏[1] 刘洋文[1] 李禾[2] 徐飞[1] 

机构地区：[1]南昌大学材料科学与工程学院,江西南昌330047 [2]南昌航空工业学院材料科学与工程学院,江西南昌330034

出　　处：《南昌大学学报（理科版）》2006年第3期279-282,共4页Journal of Nanchang University(Natural Science)

基　　金：江西省材料中心基金资助项目(ZX200401007;KG200201013);江西省教育厅科学研究资助项目(赣教技字[2005]160号和赣教技字[2006]16)

摘　　要：太阳能薄膜电池的ZnS缓冲层一般是采用化学浴沉积法制备。制备ZnS缓冲层过程中,采用氨水为主络合剂,水合肼为辅助络合剂,通过添加少量的分散剂丙三醇,调节沉淀团簇的大小,改善ZnS薄膜质量。薄膜结构和表面组织形貌分别采用X射线衍射仪测试和高性能光学显微镜观察。研究结果表明:在优化配方(ZnSO40.007 5 mol/L;SC(NH2)20.007 5 mol/L;氨水0.44 mol/L;水合肼0.3 mol/L)下,反应温度75℃和沉积时间60m in时,得到的缓冲层光亮、平整。XRD衍射分析结果表明缓冲层主要成分为ZnS,存在少量Zn(OH)2。ZnS thin films which are used as buffer layers in thin film solar cell are usually deposited by chemical bath deposition. In the reactive processing,ZnS films are obtained by using ammonia and hydrazine hydrate as complexing agents, a little glycerol is used as disperse agent. It is found that hydrazine hydrate and glycerol play an important role in growth of ZnS films. The structure and microstructure of ZnS films are characterized by means of X - ray diffractometer and high quality optical microscope. The optimized concentrations used are： ZnSO4 · 7H2O 0. 007 5 mol/L ; SC （ NH2 ） 2 0. 007 5 mol/L ; ammonia 0.44 mol/L ; hydrazine hydrate 0.3 mol/L. The quality of ZnS films is influenced by the reactive temperature and deposited time, and it indicates that the condition of reactive temperature of 75 ℃ and a deposition time of 60 min is very suitable to obtain thin films with better quality. By ana- lyzing the structures of the ZnS thin films, there is a little amount of Zn（OH） 2 except majority amount of ZnS.

关 键 词：化学浴沉积法 ZNS薄膜 XRD 

分 类 号：O414.24[理学—理论物理] TP212.2[理学—物理]