Deposition of GaN thin film on ZnO/Si by DIBD method  

作　　者：LI Geng-wei YANG Shao-yan LIU Zhi-kai ZHENG Zhi-yuan 

机构地区：[1]School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China [2]Laboratory of semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Optoelectronics Letters》2006年第4期282-283,共2页光电子快报（英文版）

基　　金：SupportedbytheNational"863"Program(No.863-715-001-0162)andbytheScienceandTechnologyFoundationofChinaUniversityofGeosciences(Beijing)(No.200524).

摘　　要：The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system.The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS).It is shown that after a thin GaN film grown on the Zn/Si,the peaks of the Zn and O are not observed.This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method.

关 键 词：GAN 薄膜 沉积作用 X射线 光电子 

分 类 号：O484.1[理学—固体物理]