MgSiO_3掺杂对ZnO压敏电阻器电学性质的影响  

Effect of MgSiO_3 on the Electrical Properties of ZnO-based Varistors

作　　者：陈洪存[1] 臧国忠[1] 王矜奉[1] 苏文斌[1] 王春明[1] 亓鹏[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《电子元件与材料》2006年第8期19-21,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50572056);山东省自然科学基金资助项目(Z2003F04)

摘　　要：采用传统陶瓷工艺制备了MgSiO3掺杂的防雷用ZnO压敏电阻。实验发现,掺杂0.04%的MgSiO3(物质的量)能显著提高其电流–电压非线性、通流能力和电压梯度E1.0,且能降低样品的漏电流IL以及残压比V40kA/V1mA。其非线性系数α和压敏电压梯度分别高达120,180V/mm,样品正反面各五次通流40kA、8/20μs波后,残压比和压敏电压变化率?V1mA/V1mA分别仅为2.56和–2.9%,且漏电流变化很小。对样品的微观结构分析显示,其电学性能的提高和晶粒的均匀程度有关。Investigated was the effect of MgSiO3 on the electrical properties of ZnO based lightning conductors, The nonlinear electrical properties, surge absorption capability and voltage gradient E1.0 can be improved, as well as the residual voltage ratio V40kA/ VimA and the leakage current IL depressed greatly by doping 0.04% MgSiO3 （amount of substance）. The nonlinear coefficient ct of 120 and voltage gradient of 180 V/mm were obtained by doping 0.04% MgSiO3. After five shocks on each face by the 40 kA, 8/20μs pulse, the residual voltage ratio and the variation of breakdown voltage AV1mA/V1mA of the sample doped with 0.04% MgSiO3 was only about 2.56 and -2.9%, respectively, and the leakage current changed slightly. The micro-photos indicate that the improvement of electrical properties has great relation with the uniformity of grains.

关 键 词：电子技术 氧化锌 压敏电阻 电学非线性 残压比 

分 类 号：TN379[电子电信—物理电子学]