Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks  

高k栅介质纳米MOSFET栅电流模型(英文)

作　　者：王伟[1] 孙建平 顾宁[1] 

机构地区：[1]东南大学生物电子学国家重点实验室江苏省生物材料与器件重点实验室,南京210096 [2]美国密西根大学电气工程和计算机科学系

出　　处：《Journal of Semiconductors》2006年第7期1170-1176,共7页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60371037,20573019)~~

摘　　要：A quantum model based on solutions to the Schrodinger-Poisson equations is developed to investigate the device behavior related togate tunneling current for nanoscale MOSFETs with high-k gate stacks. This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance. Comparisons are made for gate current behavior between nMOSFET and pMOSFET high- k gate stack structures. The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.介绍了一种纳米MOSFET(场效应管)栅电流的统一模型,该模型基于Schr dinger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET.运用该方法计算了各种结构和材料高k介质的MOSFET栅极电流,并对pMOSFET和nMOSFET高k栅结构进行了分析比较.模拟得出栅极电流与实验结果符合,而得出的优化氮含量有待实验证实.

关 键 词：high- k gate current quantum model 

分 类 号：TN386[电子电信—物理电子学]