牺牲层腐蚀二维数值模拟与仿真  

2D Numerical Simulation of Sacrificial Layer Etching

作　　者：李艳辉[1] 李伟华[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《Journal of Semiconductors》2006年第7期1321-1325,共5页半导体学报（英文版）

基　　金：国家杰出青年科学基金资助项目(批准号:50325519)~~

摘　　要：建立了基于扩散方程的二维腐蚀模型,并给出相应的边界条件.为求解二维扩散方程,分别给出了有限差分显式和隐式求解算法.得到了每一时刻溶液在具体位置的浓度值,再由Topography模型计算腐蚀前端面的腐蚀情况得到腐蚀前端行进轮廓线.编程实现了对多种不同牺牲层几何结构以及组合结构腐蚀过程的仿真,最后实验验证了模拟的真实性.Since the etching mechanism of sacrificial layer is mainly restricted by diffusion,a 2D etching model based on the diffusion equation is constructed and the relative boundary conditions are given. Explicit and implicit numerical algorithms using the finite-difference method are presented to solve the 2D diffusion equation to get the value of the concentration at every site at different times. The topography model is then used to compute the etching state to determine the etch contour at the front. A simulation program that can simulate different complex sacrificial structures is implemented. The simulation is validated by experiments.

关 键 词：牺牲层腐蚀 扩散方程 差分算法 

分 类 号：TN405[电子电信—微电子学与固体电子学]