在超声分子束下气相四甲基硅分子的多光子解离与电离  

MULTIPHOTON DISSOCIATION AND IONIZATION OF Si(CH 3) 4[KG*2/3]IN A SUPERSONIC MOLECULAR BEAM

作　　者：施德恒[1,2,3] 陆庆正[1,2,3] 孔繁敖[1,2,3] 余枝广 马兴孝[1,2,3] 

机构地区：[1]中国科技大学近代化学系 [2]空军第一航空学院基础部 [3]中国科学院化学研究所

出　　处：《原子与分子物理学报》1996年第4期392-396,共5页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金

摘　　要：采用超声分子束技术，以飞行时间质谱仪，在４１０～３７１ｎｍ内着重检测了不同波长、不同能量的激光对气相Ｓｉ（ＣＨ３）４分子多光子电离（ＭＰＩ）飞行时间（ＴＯＦ）质谱产物分布的影响。根据实验结果，对Ｓｉ（ＣＨ３）４分子多光子解离电离可能经历的通道和反应机理进行了讨论。The multiphoton dissociation and ionization of Si(CH 3) 4in a supersonic molecular beam was investigated with a XeCl excimer laser (308nm) and a tunable dye laser (410-371nm) by a Time of Flight (TOF) mass spectrometer. According to the experimental results, it concluded that the Si +ions might be mainly produced via a sequential photodissociation to form Si atoms first and followed by a nonresonant or resonant enhanced multiphoton ionization of Si atoms , whereas Si(CH 3) 4(n=1,2,3) ions might be mainly produced via the photodissociation of Si(CH 3) 4to form neutral molecular fragments first and followed by auto ionization. The mechanism of the laser induced multiphoton dissociation and ionization was discussed.

关 键 词：飞行时间质谱 反应动力学 四甲基硅 

分 类 号：O634.41[理学—高分子化学] O561.4[理学—化学]