高频溅射生长ZnS∶Tb，F薄膜的结构与发光  

MICROSTRUCTURE AND LUMINESCENT STUDIES OF EL THIN FILMS OF ZnS∶Tb, F

作　　者：余庆选[1] 班大雁[1] 张纪发 方容川[1] 

机构地区：[1]中国科学技术大学物理系,中国科学技术大学结构分析中心

出　　处：《发光学报》1996年第3期225-229,共5页Chinese Journal of Luminescence

摘　　要：本文采用Ｘ射线衍射和阴极射线发光技术对溅射法生长的ＺｎＳ∶Ｔｂ，Ｆ薄膜的发光光谱和薄膜的微观结构进行了研究，得出了激晶薄膜的晶粒尺寸与发光强度的关系．讨论了稀土离子的价态对掺杂稀土微晶薄膜的发光性质与晶粒尺寸的关系的影响．A systamatic study of the effect of the microstructure on the luminescence of ZnS: Tb, F thin film was carried out using X-ray diffraction and CL techniques. The Tb3+ emission intensity depends strongly on the substrate temperature and the annealing temperature, which also affects the crystallinity of the thin film. In addition, the effect of the gain size in the films and the type of valent charge states of rare earth ions on luminescence of polycrystalline thin film was also discussed.

关 键 词：薄膜 微观结构 发光光谱 硫化锌 

分 类 号：TN304.22[电子电信—物理电子学] O484.41[理学—固体物理]