HgCdTe薄膜材料缺陷的研究现状  

Current Status of Research on Defects in HgCdTe Epilayers

作　　者：曹秀亮[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外》2006年第8期27-32,共6页Infrared

摘　　要：HgCdTe外延薄膜材料中的缺陷是制约高性能红外焦平面器件发展的主要因素。对缺陷的研究与评价是材料生长以至器件制备过程中不可或缺的重要一环．本文详细介绍了HgCdTe外延材料中几种主要缺陷的研究进展．The defects in HgCdTe epilayers are the critical factors to limit the development of high performance infrared focal plane devices. The measurement and assessment of the defects in HgCdTe epilayers are essential in material growing and device fabrication. In this paper, the advances in the research on several main defects in HgCdTe epilayers are presented in detail.

关 键 词：HGCDTE 外延 缺陷 器件 

分 类 号：TN213[电子电信—物理电子学]