光伏型长波HgCdTe红外探测器的数值模拟研究  

NUMERICAL SIMULATION OF LONG WAVELENGTH PHOTOVOLTAIC HgCdTe PHOTODIODES

作　　者：徐向晏[1] 陆卫[1] 陈效双[1] 徐文兰[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2006年第4期251-256,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(60244002)资助项目

摘　　要：报道了光伏型长波Hg1-xCdxTe(x=0.224)n-on-p红外探测器数值模拟研究的结果.采用二维模型,在背照射方式下,以p区厚度、两电极间距离、结区杂质浓度分布、少子寿命为参量,模拟计算了R0A积、零偏光电流与这些参量之间的变化关系.计算表明,随p区厚度增加,R0A积下降;R0A积随电极之间距离增大而增加,但量子效率随距离增大而降低,电极之间最佳距离大约为100μm;R0A积和光电流对结区杂质浓度分布形状不敏感;随少子(电子)寿命降低,R0A积和光电流下降.二维模型弥补了一维模型难以计算横向电流、电场的缺点.The performance of n-on-p long wavelength photovoltaic Hg1-xCdxTe （x = 0.224） photodiodes was simulated numerically. Calculation was based on two-dimensional model for the backside-illuminated configuration. The influence of several factors, including p-type region thickness, the distance from p-type region contact to n^＋ area, n-side doping profile, and lifetime of electron, on RoA product and zero-bias photocurrent was studied. Simulation results show that RoA product decreases with increasing the thickness of the p-type region. As the distance from p-type region contact to n^＋ area increases, RoA product increases, but quantum efficiency deceases, and the optimized distance is about 100μm. The performance of photodiodes is strongly dependent on minority carrier （electron） lifetime, but n-side doping profile is less important. Two-dimensional model is capable of simulating transverse current compared with one-dimensional model, and more suitable for modeling actual device.

关 键 词：HGCDTE 长波红外探测器 R0A积 量子效率 少子寿命 

分 类 号：TB4[一般工业技术]