HgCdTe光伏探测器在高温背景辐照下的I-V特性分析  

I-V CHARACTERISTICS OF HgCdTe PHOTODIODE UNDER BACKGROOUND ILLUMINATION OF HIGH TEMPERATURE

作　　者：王晨飞[1] 李言谨[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与毫米波学报》2006年第4期257-260,共4页Journal of Infrared and Millimeter Waves

基　　金：国防预研(4130202105)资助项目

摘　　要：对中波HgCdTe光伏探测器进行了不同目标温度范围的黑体辐射I-V测试研究,结果表明器件光电流随着目标辐射的升高逐渐上升,同时器件微分阻抗随之下降;在同一背景红外辐射下,器件微分阻抗随着反向偏压的增加而下降.采用“lucky electron”模型对器件的R-V曲线进行了拟合,结果证实器件反偏微分电阻下降的主要原因是由于pn结耗尽区光生载流子的激增,碰撞电离导致的光电倍增效应所引起.The I-V characteristics of mid-wavelength HgCdTe photodiodes were studied under the variable incident illumination. The result shows that the photocurrent of photodiode increases with the increase of incident illumination, and the differential resistance of photodiode decreases. When the incident illumination is constant, the differential resistance of photodiode descends with the raise of reverse-bias voltage. The R-V curve of photodiode was fit by ＂lucky electron＂ model. It verifies that due to plenty of photo-generated carrier occurred in the depletion region, photocurrent multiplication induced by electron impact ionization is the primary reason of decreasing reverse-bias differential resistance.

关 键 词：HGCDTE 高温背景辐照 碰撞离子化 微分阻抗 

分 类 号：O472[理学—半导体物理]