刻蚀在导带边缘的PBG微带线  

PBG Microstrip Line Etched on the Conductor Line

作　　者：张友俊[1] 张海峰[2] 肖建康[3] 李英[3] 陈鸿[4] 

机构地区：[1]郑州大学信息工程学院,河南郑州450052 [2]中原工学院电子信息学院,河南郑州450007 [3]上海大学理学院,上海200444 [4]同济大学波耳固体物理研究所,上海200092

出　　处：《压电与声光》2006年第4期478-480,共3页Piezoelectrics & Acoustooptics

基　　金：河南省自然科学基金资助项目(511011200);国家重点基础研究发展计划("九七三"计划)基金资助项目(2001CB6104)

摘　　要：首次提出了一种新型的50Ω光子带隙(PBG)结构微带线。该PBG结构的制作是在金属导带边缘周期地刻蚀矩形和梯形结构,其微带线的阻带较深、较宽,且通带的波纹较小,与在金属导带或金属接地板上刻蚀周期性孔的通常PBG微带线相比,该新型PBG结构微带线的S参数特性较好。这种新型PBG结构的仿真结果得到了实验的证实。A novel photonic bandgap （PBG） microstrip line for 50Ω conventional microstrip line is proposed for the first time. The proposed structure is formed by etching rectangle or trapezium on the edge of the conductor line periodically. The stopband of the novel PBG microstrip line is deep and wide, and the ripple of passband is small. The S parameters of the novel PBG microstrip line is better comparing with conventional PBG microstrip line with holes etched in the conductor line or in the ground plane. Measurement data of this novel PBG microstrip line agrees well with simulations.

关 键 词：光子带隙 微带线 阻带 

分 类 号：TN455[电子电信—微电子学与固体电子学] TN713