基于流体动力学模型的2维砷化镓金属半导体场效应管数值模拟  

2D hydrodynamic simulation of GaAs metal-semiconductor-field-effect-transistor

作　　者：贡顶[1] 韩峰[1] 王建国[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2006年第7期1134-1138,共5页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：介绍了用于描述工作在高频强电场条件下的亚微米半导体器件的流体动力学模型,并讨论了为求解流体动力学模型所采用的算子分裂方法和有限体积法。使用流体动力学模型,对亚微米GaAs金属半导体场效应管器件进行了2维数值模拟,得到了该器件的I-V曲线、电子密度分布和电子温度分布。数值模拟结果表明,器件栅极电压越负,肖特基结的耗尽层越厚,源漏电流越小;在耗尽层内电场最强处,电子温度达到4 000 K;在强电场下,电子温度将严重偏离晶格温度,形成所谓热电子。The hydrodynamic model （HDM） is presented for the transient simulation of GaAs metal-semiconductor-field- effect-transistor（MESFET） which works at high electric fields and frequencies. The finite volume discretization scheme and operator split method used for solving the HDM equations are discussed. A two-dimensional MESFET device is numerically simulated by using the HDM. Some typical numerical results are presented, such as the Ⅰ-Ⅴ curves, distribution of electron density and temperature of the device, etc. The results show that while the gate biases are more negative, the Schottky depletion layer is thicker and the source-drain current flow is lower. In the region of high electric field, the electron temperature is much higher than the lattice temperature, and the so-called hot electrons appear. At the position of the highest electric field within the depletion layer, the electron temperature can reach 4 000 K.

关 键 词：金属半导体场效应管 砷化镓 2维半导体模拟 流体动力学模型 AUSM+up格式 

分 类 号：TN43[电子电信—微电子学与固体电子学]