三栅MOSFET阈值电压模型  

Threshold Voltage Model for Tri-Gate MOSFET's

作　　者：刘建[1] 石新智[2] 林海[2] 王高峰[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072 [2]武汉大学微电子与信息技术研究院,湖北武汉430072

出　　处：《微电子学》2006年第4期400-402,406,共4页Microelectronics

基　　金：国家自然科学基金重大项目(90307017);国家自然科学基金资助项目(60444004)

摘　　要：根据三栅(TG)MOSFET二维数值模拟的结果,分析了TG MOSFET中的电势分布,得出了在硅体与掩埋层接触面的中心线上的电势随栅压变化的关系;通过数学推导,给出了基于物理模型的阈值电压的解析表达式;并由此讨论了多晶硅栅掺杂浓度、硅体中掺杂浓度、硅体的宽度和高度以及栅氧化层厚度对阈值电压的影响;得出在TG MOSFET器件的阈值电压设计时,应主要考虑多晶硅栅掺杂浓度、硅体中掺杂浓度和硅体的宽度等参数的结论。The electric potential distribution in Si body of Tri-Gate MOSFET was obtained by 2D numerical simulation, and an analytic model of threshold voltage was established. Threshold voltage calculated according to the model is matched with results of numerical simulation. Effects of polysilicon gate doping concentration, Si body doping concentration, the width and height of Si body and the gate oxide thickness on threshold voltage were investigated. It is concluded that Si body doping concentration, gate doping concentration and the width of Si body are the most important parameters for designing threshold voltage.

关 键 词：三栅MOSFET 阈值电压 数值模拟 

分 类 号：TN432[电子电信—微电子学与固体电子学]