集成电路制造工艺状态的表达与跟踪监控  

A Method for Describing and Monitoring Process States in IC Fabrication

作　　者：具丽洁[1] 严利人[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2006年第4期411-415,共5页Microelectronics

摘　　要：文章提出了对PCM参数进行正交化而建立起一套广义参数,再以广义参数为基础构建工艺状态空间的技术。在工艺状态空间中,作为工艺结果的测试值集的数据分布为多维椭球体;该椭球体随生产的进行而呈现出连续性的形变,因此,跟踪这种形变,就实现了对工艺状态的监控。提出了将特定批次工艺状态与参照态进行状态比较的相似度指标计算公式,在多维空间中实现了整体性的统计工艺控制(SPC)。进一步地,由于状态空间中各坐标基矢的特定指向与工艺失效因素一一对应,对失效工艺的诊断与纠正也变得易于进行。One way to construct a process state space is to compose a set of generalized parameters from orthogonalizing the PCM parameters, and use them as the bases of the space. With our method, not only the possible process failures can be detected, but also the process state can be long term monitored. In the process state space, the data distribution appears like a muhi-dimension elliptical globe. So, the transition of a process can be monitored by tracing the transmutations of the elliptical globe. A formula is suggested to calculate the process state similarity. Further, if a process failure occurs, the cause can be directly pointed out.

关 键 词：集成电路工艺 工艺状态 工艺监控 统计工艺控制 工艺相似度 

分 类 号：TN405[电子电信—微电子学与固体电子学]