微加工气敏元件的结构设计与模拟分析  

Structure Design and Simulation Analysis of Micromachined Gas Sensor

作　　者：王景道[1] 张鸿海[1] 刘胜[1,2] 任继文[1] 

机构地区：[1]华中科技大学 [2]韦恩州立大学,美国底特律MI48202

出　　处：《机械与电子》2006年第8期3-5,共3页Machinery & Electronics

摘　　要：提出了一种基于MEMS工艺的薄膜型气敏元件结构,对其工艺进行了阐述.该气敏元件结构主要包括5层.采用ANSYS对气敏元件结构进行热模拟分析,得到了该结构的温度场和中心点响应的较优结果响应时间3s,达到稳态时间28s,薄膜中心点稳态温度359.013℃.A membrane structure for gas sensor based on MEMS technology is presented, and the technology for the gas sensor are showed. The structure of the gas sensor contains mainly five layers. We have also simulated and analyzed the thermal response of the structure using ANSYS, and obtained the perfect results of the temperature distributing of the structure and response of its center：the response time is 3 s, the required time of reaching static state is 28 s,and the static temperature at the center of the membrane is 359.013℃ .

关 键 词：气敏元件 有限元分析 MEMS工艺 薄膜 半导体 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]