氮气退火对氟化非晶碳膜结构和电学性能的影响  

Effects of annealing on structural and electrical properties of fluorinated amorphous carbon films

作　　者：吴振宇[1] 杨银堂[1] 汪家友[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《功能材料》2006年第7期1081-1083,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(9027022);电子元器件可靠性物理及其应用技术国家级重点实验室资助项目(51433020205DZ01)

摘　　要：采用电子回旋共振等离子体化学气相淀积（ECR-CVD）方法以C4F8和CH4为源气体制备了氟化非晶碳（a-C：F）膜并在氮气气氛中对a-C：F膜进行了退火处理研究。X光电子能谱（XPS）化学结构分析表明，退火后a-C：F膜中CF3，CF2和CF含量减少，而C-CR（x=1～3）交联结构增多。电学性能研究指出，退火后a-C：F薄膜的介电常数由于电子极化和薄膜密度的增大而上升，Al／a-C：F／Si结构的阻滞效应由于界面态密度下降而减弱，同时a-C：F膜的π-π^＊带隙和电荷陷阱能量减小并导致薄膜漏电流增大。Fluorinated amorphous carbon （a-C ： F） films were deposited using C4F8 and CH4 as precursor gases by electron cyclotron resonance chemical vapor deposition （ECR-CVD） and was subsequently annealed in a nitrogen atmosphere. Chemical compositions were investigated by X-ray photoelectron spectroscopy （XPS）. Experimental results show that concentrations of CF3, CF2, and CF bonds decrease, while that of C-CFx （x= 1 - 3） increase after annealing. The dielectric constant of a-C ： F films increases due to increased electronic polarization and film density. The magnitude of C-V hysteresis effect decreases due to reduced interface trap density. The energy gap between π valence band and π^＊ conduction band also decreases, leading to reduction of trap energy and enhancement of leakage current.

关 键 词：A-C:F 退火 化学结构 电学性能 XPS 

分 类 号：O484.4[理学—固体物理]