高密度高导电性ITO靶研制  

Manufacture of ITO Target with High Density and High Conductivity

作　　者：张维佳[1] 王天民[1] 崔敏[1] 金飞[1] 丁照崇[1] 阎兰琴[1] 

机构地区：[1]北京航空航天大学,北京100083

出　　处：《稀有金属材料与工程》2006年第7期1021-1024,共4页Rare Metal Materials and Engineering

基　　金：国防科工委预研科学基金资助(413100202)

摘　　要：采用化学共沉淀法掺金属Nb,Ta和P到ITO材料中可使ITO（Indium Tin Oxide）靶相对密度达到97%～99%,并且靶电阻率小于3.0×10^-4Ω·cm,其质量损失率小于4.0%.采用直接掺杂法将TiO2纳米粉末掺入到纳米ITO粉末中可使ITO靶相对密度达到95%以上.当烧结温度为1500℃时,掺Nb,Ta,P的ITO靶电阻率稍小于纯ITO靶的电阻率.ITO （Indium Tin Oxide） targets are prepared by adulterating Nb, Ta and P by chemistry coprecipitation method. For the targets, the elative density is over 97% up to 99%, the resistivity and mass loss are under 3.0×10^-4 Ω·cm and 4.0%, respectively. The relative density of ITO targets adulterating nanosized TiO2 powders by directly adulterating method is over 95%. The resistivity of ITO targets adulterating Nb and Ta is a little smaller than that of the pure ITO targets.

关 键 词：ITO 溅射靶 烧结剂 掺杂 

分 类 号：TB43[一般工业技术]