重频激光辐照半导体损伤的有限元分析  

Finite Element Analysis of Damage Threshold of Semiconductor Irradiated by Multiple Laser

作　　者：刘全喜[1] 钟鸣 江东 齐文宗[1] 蔡邦维[1] 郝秋龙[1] 赵方东[1] 

机构地区：[1]四川大学电子信息学院,四川成都610064 [2]西南技术物理所,四川成都610041

出　　处：《激光与红外》2006年第8期670-674,共5页Laser & Infrared

基　　金：西南技术物理研究所资助课题

摘　　要：在考虑到材料热力学参数随温度变化的前提下,以热传导方程和热弹方程为基础,采用有限元分析算法,考查了200ns脉宽、1064nm波长重频激光辐照下,半导体材料InSb体内的温升和热应力分布,分析了由温升效应所致该材料的损伤破坏类型,探讨了热熔融损伤和热应力损伤阈值随光斑尺寸、脉宽、重复率、脉冲次数等的变化规律。Under considering the influence of temperature distributions to the thermodynamic parameters of the material, based on the thermal conduction equations and the thermal-elastic equations, the transient distributions of temperature and thermal stress in the semiconductor material InSb are calculated by a finite element analysis method. The damage mechanism of the material irradiated by 200 ns/1064 nm pulse lasers is studied. And the influence of the beam radius, the pulse width, the repetition rate and the number of pulses to the melting threshold and the thermal stress damage threshold of InSb is investigated in this paper.

关 键 词：重频激光 损伤阈值 有限元分析 INSB 热传导方程 热弹方程 

分 类 号：TN249[电子电信—物理电子学]