HgCdTe外延材料的缺陷腐蚀特性  

Eteh Pits Formed by Schaake and Chen Etchants in HgCdTe Epilayer

作　　者：曹秀亮[1] 杨建荣[1] 

机构地区：[1]中国科学院上海技术物理研究所功能材料与器件研究中心,上海200083

出　　处：《Journal of Semiconductors》2006年第8期1401-1405,共5页半导体学报（英文版）

摘　　要：通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究,揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律.深度腐蚀实验显示外延材料中确实存在着通常认为的具有定向穿越特性的穿越位错.将两种腐蚀剂作用于同一样品后发现,Schaake和Chen腐蚀剂形成的具有穿越特性的腐蚀坑有一一对应的关系.除了穿越位错外,在两种腐蚀方法揭示出的腐蚀坑中都还存在着一种不具备穿越特性的腐蚀坑,两者在密度分布以及界面处密度增值方面具有相同的特性,但前者在宏观缺陷附近密度出现明显的增值,而后者则没有出现类似的现象.The morphology and density distribution of etch pits formed by Schaake and Chen etchants on the （111） B face of HgCdTe liquid phase epitaxy films are studied. The experimental results of the deep etches show that threading dislocations with certain orientations really exist in the epilayer. After both etchants acted on the same sample,it is observed that most of the etch pits formed by Sehaake and Chen etchants have a one-to-one correspondence in distribution. In addition to these etch pits,it is also found that there is another kind of etch pit for both Sehaake and Chen etchants, but neither of them threads the HgCdTe epilayer. Their density distributions and density multiplications near the interface are the same. These etch pits formed by the Sehaake etchant also have a multiplication around macroscopic defects, but this phenomena is not observed for those of the Chen etchant.

关 键 词：缺陷 位错 腐蚀坑 Schaake CHEN HGCDTE 

分 类 号：TN304[电子电信—物理电子学]