AlGaN/GaN HEMT高场应力退化及紫外光辐照的研究  

Degradation Under High-Field Stress and Effects of UV Irradiation on AlGaN/GaN HEMTs

作　　者：王冲[1] 张进城[1] 郝跃[1] 杨燕[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2006年第8期1436-1440,共5页半导体学报（英文版）

基　　金：国防973计划(批准号:513270407);国防科技预研(批准号:41308060106);国防科技重点实验室基金(批准号:51433040105DZ0102);国家重点基础研究发展计划(批准号:2002CB3119);西安电子科技大学青年科研工作站(批准号:03002)资助项目~~

摘　　要：采用不同的应力偏压发现器件特性的下降程度随应力偏置电压的增大而增大.经过3×104s40V高场应力后,蓝宝石衬底AlGaN/GaNHEMT饱和漏电流下降5·2%,跨导下降7·6%.从器件直流参数的下降分析了应力后的特性退化现象并与连续直流扫描电流崩塌现象进行了对比,同时观察了紫外光照对应力后器件特性退化的恢复作用.直流扫描电流崩塌现象在紫外光照下迅速消除,但是紫外光照不能恢复高场应力造成的特性退化.After 3 × 10^4s of high-field stress,the drain current and transconductance of AlGaN/GaN HEMTs grown on sapphire are decreased by 5.2% and 7. 6%, respectively. The degradation is more obvious than under high stress bias. The reason for this is investigated and compared to the current collapse that occurs under DC sweeping. The effects of UV irradiation on the recovery of the devices are observed. UV illumination can eliminate the DC sweeping current collapse, but it cannot reverse the degradation characteristics caused by the high-field stress.

关 键 词：ALGAN/GAN 高电子迁移率晶体管 热电子 电子陷阱 

分 类 号：TN386[电子电信—物理电子学]