单片集成低功耗神经信号检测CMOS放大器  

A Single-Chip and Low-Power CMOS Amplifier for Neural Signal Detection

作　　者：王余峰[1] 王志功[1] 吕晓迎[2] 王惠玲[2] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096 [2]东南大学生物电子学国家重点实验室,南京210096

出　　处：《Journal of Semiconductors》2006年第8期1490-1495,共6页半导体学报（英文版）

基　　金：国家自然科学基金重大研究计划资助项目(批准号:90377013)~~

摘　　要：采用CSMC0·6μmCMOS工艺设计了可用于植入式神经信号检测的放大器芯片.电路适用于卡肤电极系统,包括低噪声前置放大级、由电流模仪表放大器构成的主放大级、输出缓冲级和恒跨导偏置级.电路工作于2·5V/±1·25V,功耗180μW.为满足体内植入式神经信号检测的要求,通过电路改进以避免使用片外元件,实现了单片集成.根据神经信号的特点,电路频率响应带宽设计为59Hz^12·8kHz,增益80dB.采用时域方法测试,芯片达到设计目标,有望用于体内神经信号检测.依据测试结果分析了电路特性并提出改进方法.This paper presents an implantable amplifier for neural signal recording with cuff electrodes in CSMC 0.6μm CMOS technology. The amplifier consists of a low-noise preamplifier stage, a current-mode instrumentation amplifier stage, a buffer stage, and a constant-gm bias stage. The supply voltage is 2. 5/±1.25V, and the power consumption is 180μW. In implementing an implanted neural signal detector extra components can be avoided by using novel techniques. According to the neural signal spectrum, the pass-band of the amplifier is set to 59Hz～12.8kHz and the mid-band gain is 80dB. Measurements of the amplifer＇s time domain performance are in agreement with the design. From the measurements, further ways to improve are determined.

关 键 词：神经信号检测 神经功能信号再生 卡肤电极 CMOS工艺 

分 类 号：TN722[电子电信—电路与系统]