一种克服工艺参数影响的I_(DDT)方法  

A Method Overcomed the Impact of Process Variation in I_(DDT)

作　　者：盛艳[1] 邝继顺[1] 董玮炜[1] 

机构地区：[1]湖南大学计算机与通信学院,长沙410082

出　　处：《科学技术与工程》2006年第17期2653-2656,共4页Science Technology and Engineering

基　　金：国家自然科学基金(60173042;69973016)资助

摘　　要：在瞬态电流测试中,即使是同一设计的芯片,由于制作工艺参数的不稳定性,在输入相同的测试向量对时,会产生不同的瞬态电流,这就可能减小故障电路和无故障电路瞬态电流的差别,导致不能对电路是否有故障做出正确的判断。参考稳态电流测试中克服工艺参数影响的方法,针对开路故障,提出了一种在瞬态电流测试中克服工艺参数影响的方法,并利用Pspice软件对这种方法进行了模拟实验。模拟结果证明,该方法是可行的。Same integrated circuits manufactured by same technics can draw different IDDT due to the process variations between the circuits even though an identical test vectors is applied to them. When the difference is marked, it is difficult to determine whether the variation in IDDT is due to process variation or is due to a defect. A method is described Which overcomes the problems of the process variation in IDDT test according to the method applied in IDDQ test, and validates this method by Pspice simulation. Experimental results show that this method is feasible.

关 键 词：CMOS电路 瞬态电流测试 PSPICE模拟 工艺参数 

分 类 号：TN386[电子电信—物理电子学]