HMDSO/H_2等离子体化学气相沉积非晶包覆纳米α-SiC薄膜的实验研究  

Synthesis of Nanostructured SiC Films by Plasma Enhanced Chemical Vapor Deposition with Hydrogen Diluted Hexalmethyldisiloxane as Precursor

作　　者：颜官超[1] 丁斯晔[1] 朱晓东[1] 周海洋[1] 温晓辉[1] 丁芳[1] 

机构地区：[1]中国科学院基础等离子体物理重点实验室中国科学技术大学近代物理系,合肥230026

出　　处：《真空科学与技术学报》2006年第4期326-329,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.50472010)

摘　　要：本文利用六甲基二硅氧烷(HMDSO)作为先驱物质、氢气为稀释气体,进行了等离子体化学气相沉积碳硅薄膜的实验研究。运用X射线衍射、拉曼光谱、扫描电子显微镜和X射线光电子能谱对薄膜的成份和结构进行了分析。结果表明,在生长温度为750℃的条件下成功地得到了纳米-αSiC沉积,碳化硅晶粒被包覆在非晶的SiOxCy∶H成分中。薄膜由椭球状的颗粒组成,且随着HMDSO比例的增加,薄膜的结晶度和表面均匀性都得到改善。高流量氢气和HMDSO单体的使用被认为有效地促进了-αSiC晶体的形成。Nanostructttred SiC films, with SiC grains embedded in amorphous matrix, were grown by plasma enhanced chemical vapor deposition （PECVD） with hydrogen diluted hexalmethyldisiloxane （HMDSO） as the precursor. The films were characterized with X-ray diffraction （XRD）, scanning electron microscopy （SEM）, Raman spectroscopy and X-ray photoelectron spectroscopy （XPS）. The results show that at 750℃, ellipsoidal nano grains encapsulated by amorphous SiOxC3：H are crystalline α-SiC. As HMDSO concentration increases, the surface uniformity, surface compactness, and crystal structure of the films improve possibly because HMDSO monomers and hydrogen high-flow-rate promote formation and crystallization of the α-SiC grains.

关 键 词：α-SiC 纳米 HMDSO 

分 类 号：TN304.24[电子电信—物理电子学]