红外非线性光学晶体硒镓银的生长及性质观测  

CROWTH AND CHARACTERIZATION STUDY ON AgGaSe_2 CRYSTAL FOR NONLINEAR INFRARED APPLICATIONS

作　　者：朱世富[1] 赵北君[1] 刘军[1] 李正辉[1] 江洪安 李伟堂[1] 

机构地区：[1]四川大学

出　　处：《应用科学学报》1996年第4期437-440,共4页Journal of Applied Sciences

摘　　要：用改进的布里奇曼法在两温区立式炉中生长出２０×５５ｍｍ硒镓银单晶体．晶体外观无裂纹，完整性好．将晶体沿（１０１）面解理，加工制成１０ｍｍ×１０ｍｍ×９ｍｍ测试样品，在红外显微镜下观察，晶体内部均匀，包裹体及其它缺陷较少．晶体红外透射率在１０．６μｍ附近达６２％．吸收系数为０．０５ｃｍ－１．并对晶体热蚀坑和腐蚀条纹进行了扫描电镜观察．A Perfect,orack-free single crystal of AgGaSe2 of 20mm in diameterand 55mm in length is grown by a modified Bridgman-Stockbarger techniqu e inthe two-zone vertical furnace. A sample of sibs of 10min× 10mm× 9mm is outalong the (101) cleavage plane. It is found by the IR microscope that there arefew inclusions and defects in the crystal. The transmission 18 62% and theabsorption coefficient is 0.05 cm-1 at 10.6 μm, respectively. The thermal etch pitsand corrosion stripes are observed by the Scanning Electron Microscope.

关 键 词：红外光学材料 AgGaSe晶体 生长 化合物半导体 

分 类 号：TN213[电子电信—物理电子学] TN304.26