扫描隧道显微镜重掺硅（111）表面微缺陷研究  

Surface Microstructures of Si(111)Wafers──Scanning Tunneling Microscope Observations

作　　者：刘鸿飞[1] 秦福[1] 朱悟新[1] 尤重远[1] 陈开茅[1] 

机构地区：[1]北京有色金属研究总院,北京大学物理系

出　　处：《Journal of Semiconductors》1996年第7期513-517,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：利用电化学扫描隧道显微镜（ＥＣ－ＳＴＭ）初步研究了重掺锑硅（１１１）抛光片表面的微结构．多数硅晶片表面不同部位的ＳＴＭ形貌相表明，表面处理过程产生的微缺陷远比晶体生长过程产生的微缺陷多；粗糙度约为几个纳米的大面积平整区域与面积虽小但缺陷密度很高而且无规则分布的微区共存．微缺陷密度与晶体完整性、掺杂浓度和抛光条件有关．轻掺锑硅（１１１）表面相对平整，微结构尺寸较大（１００ｎｍ左右）边缘较平滑；重掺锑硅表面微缺陷密度很高，结构复杂，平整度明显降低．表面机械损伤，杂质条纹，过腐蚀等缺陷密度通过优化表面抛光条件可以有效降低或避免．Abstract A lab-built electrochemical scanning tunneling microscope(EC-STM) was used in the study of surface microstructures of n-type Sb doped Si(111) wafers for the purpose of optimization of industrial surface processing.We found that the surface roughness depends on many factors such as crystal perfection,doping concentration, and surface processing.The STM images obtained in various regions of a heavily doped Si wafer surface reveal that large flat surface areas with surface roughness of about several um coexist with random distributed micro-areas containing very high density of defects, whereas a lightly doped Si wafer surface is rather flat and smooth.Our preliminary results show that mechanical damage, preferential chemical corrosion,and bulk crystal defects and imperfections are responsible for the surface roughness of the heavily doped Si wafers.

关 键 词：扫描隧道显微镜 掺硅 表面微缺陷 

分 类 号：TN305.3[电子电信—物理电子学]