氢对GaAs薄膜的钝化作用  

Hydrogen Passivation Effect on GaAs Thin Films

作　　者：朱慧群[1] 丁瑞钦[1] 胡怡[2] 

机构地区：[1]五邑大学薄膜与纳米材料研究所,广东江门529020 [2]暨南大学化学系,广州510632

出　　处：《光子学报》2006年第8期1194-1198,共5页Acta Photonica Sinica

基　　金：广东省自然科学基金(04011770);广东省江门市科技计划基金(江财企[2003]61号)资助项目

摘　　要：报导了射频磁控溅射与沉积气氛掺氢相结合制备单层（13～20nm厚）高质量GaAs多晶态纳米薄膜的方法，研究了氢钝化对薄膜微观结构及光学性质的影响。对GaAs薄膜进行了X射线衍射、原子力显微镜、吸收光谱、光致荧光谱的研究分析．结果表明，衬底温度500℃的掺氢薄膜和520℃的薄膜呈面心立方闪锌矿结构，薄膜的晶团尺寸较大，微观表面较为粗糙，其吸收光谱出现了吸收边蓝移和明显的激子峰，带隙光致荧光峰强明显增加，说明氢在衬底温度500℃～520℃下对薄膜有重要的钝化作用。13～20 nm monolayer high quality GaAs thin films have been deposited by radio frequency （RF） magnetron sputtering technique in the atmosphere with hydrogen. The effect of hydrogen passivation on the micro- structure and optical properties of GaAs films was reported. The GaAs thin films were studied by X-ray diffraction, atomic force microscope pattern, absorption and photoluminescence （PL） spectrum. Experimental results show that the GaAs thin films have fcc zinc-blende structure, larger the granular size and more coarseness morphology, when the substrate temperature is at 500℃～520℃ with hydrogen or at 520℃ without hydrogen, a clear exciton hump and blue shift phenomenon were observed in the absorption spectra as well as a stronger peak were found in the PL spectra. These results indicate that hydrogen has passivation effect on GaAs thin films significantly.

关 键 词：射频磁控溅射 GaAs薄膜 氢钝化 激子峰 光致荧光谱 

分 类 号：O472.3[理学—半导体物理] TB383[理学—物理]