在磁场中的Bridgman－Hg_（1－x）Cd_xTe晶体生长数值模拟研究  

Research on Numerical Simulation for Bridgman-Hg_(1-x)Cd_xTe Crystal Growth in Magnetic Field

作　　者：王培林[1] 张国艳[1] 周士仁 

机构地区：[1]哈尔滨工业大学控制工程系

出　　处：《Journal of Semiconductors》1996年第7期485-492,共8页半导体学报（英文版）

摘　　要：对垂直Ｂｒｉｄｇｍａｎ－Ｈｇ１－ｘＣｄｘＴｅ晶体生长系统，用数值模拟方法研究了与晶锭轴同方向的恒定磁场对熔体中温度场、流场、浓度场及ｓ－ｌ界面产生的影响，介绍了边界条件的处理方法．结果表明，随着磁场强度的增加，熔体中的热对流强度逐渐减弱，ｓ－ｌ界面逐渐向上移动并趋于平坦．Abstract This paper studies the effect of magnetic field parallel with the growth axis to the temperature field,flow field,concentration field as well as s-1 interface in vertical Bridgman-Hg1-xCdxTe crystal growth system using the method of numerical simulation.The processing method of boundary conditions are also described.The results have shown that the heat convective intensity in melt decreases gradually with moresing of magnetic field and the s-1 interface moves upward and tends to flatten.

关 键 词：磁场 碲镉汞 晶体生长 数值模拟 Bridgman制取 

分 类 号：TN304.05[电子电信—物理电子学]