Si基上电沉积Cu薄膜的形貌与择优取向  

Morphology and Preferential Orientation of Electro-deposited Cu/Si Thin Films

作　　者：张雅婷[1] 徐章程[1] 李菲晖[2] 

机构地区：[1]南开大学泰达应用物理学院弱光非线性光子学材料先进技术及制备教育部重点实验室,天津300457 [2]天津大学化学化工学院,天津300072

出　　处：《人工晶体学报》2006年第4期728-731,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60444010;No.60506013);南开大学引进人才科研启动基金;教育部留学回国人员科研启动基金;长江学者和创新团队发展计划资助

摘　　要：采用电化学沉积技术在S i衬底上沉积了Cu膜。场发射扫描电镜和X射线衍射分析表明:膜中存在Cu纳米颗粒,并且表现出择优取向,与衬底的取向和斜切角度以及沉积电流密度有关。在S i(100)衬底上,铜(220)晶面的织构系数随电流密度的增加而增加。在相同沉积条件下,在斜切角较小的S i(111)和S i(100)衬底上择优取向面都是铜(220)面,而在斜切角为4°的S i(111)衬底上铜(111)晶面为择优取向面。The morphology and preferred orientation of electro-deposited copper films on silicon substrates were studied by means of scanning electron microscopy and X-ray diffraction. It is found that the films contain Cu nano-particles and exhibit preferred orientation, which are related with the current density, the orientation and the miscut degree of the substrate. On Si（ 100）, the texture coefficient （TC） of Cu （220） plane increases with the increase of current density. Under the same deposition conditions, Cu （220） plane is the preferential orientation plane either on a Si （ 111 ） substrate with a miscut angle less than 0.2°,or on a Si （100） substrate. However, on a Si （111 ） substrate with a miscut angle of 4°, the Cu （ 111 ） plane is the preferentially orientated.

关 键 词：CU 电沉积 SI衬底 择优取向 

分 类 号：O484[理学—固体物理]