低压反应离子镀制备Ge_(1-x)C_x薄膜的硬度研究  

Study hardness of Ge_(1-x)C_x coatings prepared by RLVIP Technique

作　　者：王彤彤[1] 高劲松[1] 王笑夷[1] 宋琦[1] 陈红[1] 郑宣明[1] 申振峰[1] 单兆会[1] 凌伟[2] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所光学技术研究中心,吉林长春130033 [2]海军驻长春地区航空军代表室,吉林长春130033

出　　处：《光学仪器》2006年第4期79-82,共4页Optical Instruments

基　　金：国家自然科学基金资助项目(60478035)

摘　　要：应用低压反应离子镀的薄膜制备方法在G e基底上沉积了G e1-xCx薄膜,随着沉积速度在0.1nm/s^0.9nm/s之间变化,G e1-xCx薄膜的硬度在2.12 GPa^11.066 GPa之间可变,当沉积速率为0.9nm/s时,G e1-xCx薄膜最大硬度为11.066 GPa。XRD测试结果表明,沉积的G e1-xCx薄膜均为无定形结构。对薄膜稳定性和牢固度的测试表明,制备的G e1-xCx薄膜在具有较高的硬度的同时,也有良好的性能。Ge1-xCx coatings were prepared by RLVIP technique on Ge substrate, with deposition rate varying between 0. 1nm/s-0.9nm/s, hardness of Ge1-xCx coatings were in the range of 2. 120 GPa- 11. 066 GPa, at deposition rate of 0. 9nm/s, the highest hardness of Ge1-xCx coatings was 11. 066 GPa, XRD test results indicated all prepared Ge1-xCx coatings were amorphous structure. Measurements of stability and firmness indicated Ge1-xCx coating had good performance with high hardness.

关 键 词：Ge1-xCx 硬度 低压反应离子镀(RLVIP) 

分 类 号：O484[理学—固体物理]