1.55μm超辐射发光管端面减反射膜的研究  

Facet antireflection coating of 1.55μm superluminescent diode

作　　者：聂明局[1] 刘德明[1] 胡必春[1] 

机构地区：[1]华中科技大学光电子工程系,湖北武汉430074

出　　处：《光学仪器》2006年第4期159-163,共5页Optical Instruments

摘　　要：减反射膜层折射率和厚度的精密监控是超辐射发光管的关键技术。分析了超辐射发光管端面减反射膜的四种膜系,提出了监控薄膜厚度的挡板调制、高级次过正极值法。采用该法制备超低剩余反射膜的实验表明:单面镀膜后,砷化镓基片的剩余反射率达到0.04%;管芯的反馈谐振被抑制,出现超辐射现象,峰值波长从1610nm移动到1560nm,蓝移约60nm,光谱纹波小于0.3dB。The index of refraction and the layer thickness of single-layer coatings have to be strict controlled to meet for producing a high-quality single-layer antireflection coating on laser diodes facets. Analysised the facet antireflection coating of superluminescent diode. A mask modulator method combining multi-order, overshoot quantities of turning point monitoring technique are described. One facet coated LDs is driven and ASE spectra are measured. The residual reflectivity of coated GaAs is about 0.04%, the center wavelength shifts about 60 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0. 3 dB.

关 键 词：减反射膜 挡板调制法 超辐射发光管 

分 类 号：O484.1[理学—固体物理]