离子层气相反应法制备CuInS_2半导体薄膜(英文)  

PREPARATION OF CuInS_2 THIN FILMS BY ION LAYER GAS REACTION

作　　者：钱进文[1] 靳正国[1] 邱继军[1] 刘志锋[1] 

机构地区：[1]天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《硅酸盐学报》2006年第8期937-940,945,共5页Journal of The Chinese Ceramic Society

基　　金：天津市重点基础研究(No.033802311)资助项目

摘　　要：以CH3CH2OH为溶剂,CuCl和InCl3为反应物,H2S为硫源,用离子层气相反应法制备了CuInS2半导体薄膜。用X射线衍射、X射线光电子谱、扫描电镜和紫外-可见光谱等对薄膜的晶型、表面化学组成、表面形貌及光电性能进行了表征。分析了混合前驱体溶液中阳离子浓度比[Cu]/[In]对薄膜化学计量及性能的影响。[Cu]/[In]≥1.25时,可获得黄铜矿结构的CuInS2薄膜,其单相形成区外[Cu]/[In]为1.45～1.65。The CuInS2 thin films were prepared by ion layer gas reaction using C2HsOH as a solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The structural, chemical, topographical development and the photoelectric properties of thin films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. The effects of precursor solution on the stoichiometry of CulnS2 films were investigated. The results show that CulnS2 film with the complete chalcopyrite structure is obtained at [Cu]/[In]≥ 1.25, and near stoichimetric CulnS2 without any segregation phases is obtained in the range of 1.45-1.65.

关 键 词：铜铟硫薄膜 浸渍离子层气相反应 化学计量 

分 类 号：O643[理学—物理化学] TP393[理学—化学]