生长温度对Ge_2Sb_2Te_5薄膜的相变行为以及微观结构的影响  

Influences of growth temperature on the phase transition behavior and microstructures of Ge_2Sb_2Te_5 films

作　　者：都健[1] 潘石[2] 吴世法[2] 张庆瑜[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024 [2]大连理工大学物理系,辽宁大连116024

出　　处：《电子显微学报》2006年第4期328-332,共5页Journal of Chinese Electron Microscopy Society

基　　金：科技部重大基础研究前期研究专项(批准号:2004CCA03700)资助项目

摘　　要：采用射频磁控溅射方法，分别在玻璃和具有本征氧化层的Si（100）基片上制备了Ge2Sb2Te5相变薄膜。利用X射线衍射仪、扫描电镜（SEM）、原子力显微镜（AFM）、紫外分光光度计等对薄膜进行了表征，研究了不同生长温度（室温～300℃）的Ge2Sb2Te5薄膜的表面形貌和结晶特性。分析结果表明：室温沉积的薄膜为非晶态；沉积温度为100℃～250℃时，薄膜转变为晶粒尺度约14nm的面心立方结构；300℃～350℃沉积的薄膜有少量的六方相出现。薄膜表面粗糙度随着沉积温度的升高逐渐递增，且薄膜的反射率变化与表面粗糙度有直接的关系。Using a radio-frequency reactive magnetron sputtering method, Ge2 Sb2Te5 films were grown on glass substrate and Si（100） substrate with a native oxide layer . The structures and morphologies of the films have been determined by using X-ray diffraction, scanning electron microscopy, atomic force microscopy and ultraviolet spectrometry. The films were deposited at the substrate temperatures of room temperature to 300℃ . Analysis results show that the as-deposited films to be amorphous. The films deposited at the temperature range of 100℃ to 250℃ had a face-center-cubic （fcc） structure with the grain size of 14 nm. A film with hexagonal （hex） structure was deposited at 300℃ - 350℃ . The roughness increased with the increased growth temperature. The reflectivity of the films is related to the roughness of the sample surface.

关 键 词：GE2SB2TE5薄膜 射频磁控溅射 表面形貌 薄膜反射率 

分 类 号：O484.1[理学—固体物理]