高性能HfAlO介质薄膜的制备(英文)  

Preparation of High-Quality Hf-Aluminate Films by EB-PVD

作　　者：程新红[1] 宋朝瑞[1] 俞跃辉[1] 

机构地区：[1]中国科学院微系统与信息技术研究所,上海200050

出　　处：《稀有金属材料与工程》2006年第8期1192-1194,共3页Rare Metal Materials and Engineering

基　　金：Supported by National Natural Science Foundation of China(50402026)

摘　　要：利用超高真空电子束蒸发法制备了可替代 SiO2作为栅介质的 HfAlO 膜。薄膜的化学组成为(HfO2)(Al2O3)2,900℃退火处理后仍然呈现非晶状态,而且表面平滑。介电常数为 12.7,等效氧化物厚度 2 nm,固定电荷密度 4×1012cm-2,2 V 栅偏压下漏电流为 0.04 m A/cm2。后退火处理能有效降低固定电荷密度和泄漏电流密度,但会造成界面 SiO2的生长。Hfoaluminate films, a potential replacement for SiO2 as gate dielectrics, were deposited on Si substrate by ultra-vacuum electron beam evaporation （EB-PVD） method. The film with a chemical composition of （HfO2）（Al2O3）2, remained amorphous even after post annealing treatment at 900℃, presenting good electrical performances including a dielectric constant of 12.7, an equivalent oxide thickness of 2 nm, a fixed charge density of 4×10^12 cm^-2, and a leakage current density of 0.04 mA/cm^2 at the gate bias of 2V. Post annealing treatment could reduce the leakage current and the fixed charge density effectively, but made the film surface rough and increased equivalent oxide thickness.

关 键 词：HfAlO膜 高介电常数栅介质 电子束蒸发 

分 类 号：TN304.05[电子电信—物理电子学]