射频辅助脉冲激光沉积镀膜技术的特点  

THE CHARACTERISTIC OF THIN FILM DEPOSITED BY PULSED LASER DEPOSITION IN RF PLASMA

作　　者：纠智先[1] 李强[1] 

机构地区：[1]武汉工业学院数理科学系,湖北武汉430023

出　　处：《武汉工业学院学报》2006年第3期109-111,共3页Journal of Wuhan Polytechnic University

摘　　要：介绍了脉冲激光沉积(PLD)制备薄膜的原理,讨论了射频辅助脉冲激光沉积镀膜技术的特点,通过分析比较证实了射频辅助脉冲激光沉积比无射频辅助脉冲激光沉积具有更突出的优点。The preparation principle of thin film deposited by pulsed lasers and its characteristic are introduced.The characteristic of thin film deposited by pulsed laser deposition in RF plasma is discussed. And the advantages of the later compared the former are analysed emphatically.

关 键 词：脉冲激光沉积 薄膜 射频 等离子体 

分 类 号：O484[理学—固体物理]