氧化铈纳米颗粒的合成及其化学机械抛光性能  

Synthesis of CeO_2 Nanoparticles and its Chemical Mechanical Polishing Performance

作　　者：李霞章[1] 陈杨[2] 陈志刚[2] 陈建清[3] 倪超英[4] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013 [2]江苏工业学院,江苏常州213016 [3]河海大学,江苏南京210098 [4]特拉华大学,美国纽华克19711

出　　处：《润滑与密封》2006年第9期106-108,共3页Lubrication Engineering

基　　金：江苏省自然科学基金资助项目(BK2002010);江苏省高技术项目(BG2004022)

摘　　要：在醇水混合溶液中以HMT为缓释沉淀剂制备了纳米CeO2颗粒,并用TEM,SAD,XRD对其形貌和结构进行了表征,将制备的不同粒径纳米CeO2粉体配置成抛光液,对GaAs晶片进行了化学机械抛光,用AFM对其表面粗糙度进行了测量。结果表明,不同尺寸的纳米颗粒具有不同的抛光效果,随着磨料粒径的增大,表面粗糙度值随之升高。CeO2nanoparticles were synthesized in alcohol -water solvent with HMT as precipitator, and were characterized by TEM , SAD and XRD. The prepared powders were collocated into polishing slurry for chemical mechanical polishing of GaAs wafer, and the surface roughness was measured by AFM. It＇ s found that various size of nanoparticles have the different polishing effect, the surface roughness of polishing surface rises with the increasing of particle size.

关 键 词：醇水溶液 纳米CEO2 化学机械抛光 磨料粒径 

分 类 号：TG146[一般工业技术—材料科学与工程] TG356.28[金属学及工艺—金属材料]