Study on the Characteristics of SOI DTMOS with Reverse Schottky Barriers  

SOI反偏肖特基势垒动态阈值MOS特性(英文)

作　　者：毕津顺[1] 海潮和[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2006年第9期1526-1530,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目(批准号:2006CB3027-01)~~

摘　　要：Silicon-on-insulator dynamic threshold voltage MOSFETs with TiSi2/pSi as reverse Schottky barriers （RSB） are presented. With this RSB scheme,DTMOS can operate beyond 0.7V, thus overcoming the drawback of DTMOS with the gate and body connected. The experimental results demonstrate that the threshold voltage in DT mode with an RSB is reduced by about 200mV at room temperature. SOI MOSFETs in DT mode with an RSB have advantages such as excellent subthreshold slope and high drivability over those under normal mode operation. The breakdown characteristics of SOI MOSFETs in the off-state are compared for the DT mode with RSB, floating body mode, normal mode.将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOIDTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOIDTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOIDTMOS的关态击穿特性进行了比较.

关 键 词：SOI dynamic threshold Schottky barrier 

分 类 号：TN386[电子电信—物理电子学]