双源电子束蒸发制备Si/SiO_2光学薄膜的工艺  

Preparation of Si/SiO_2 Optical Thin Film by Double Source Electron Beam Evaporation Technology

作　　者：赵妙[1] 周代兵[1] 谭满清[1] 王晓东[1] 吴旭明[1] 

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083

出　　处：《Journal of Semiconductors》2006年第9期1586-1589,共4页半导体学报（英文版）

摘　　要：用双源电子束蒸发的方法,在K9玻璃基片上蒸镀Si和SiO_2的混合膜.通过改变两种膜料蒸发速率的比例,得到的各个膜层,其折射率大小在两种膜料折射率之间的范围内变化.从实验上得出了混合膜层的折射率随Si和SiO_2蒸发速率比变化的规律,并讨论了这种淀积方法的优越性.A technology for preparing optical thin films is introduced. A Si/SiO2 mixed thin film is evaporated onto K9 glass by double source electron beam evaporation. The results show that the reflectivity index of the mixed thin film changes with the proportion of the Si and SiO2 evaporation rate,and its value changes between that of Si and SiO2. The rules between the proportion of the evaporation rates and the reflectivity index is obtained through the experiment. The advantages of the tech- nology are discussed.

关 键 词：薄膜 介质光学膜 双源电子束蒸发 折射率 蒸发速率 

分 类 号：O484.41[理学—固体物理]