多电流路径抑制片上电感电流拥挤效应  

Suppressing of On-Chip Inductor Current Crowding by a Multi-Current-Path Method

作　　者：刘珂[1] 菅洪彦[1] 黄晨灵[1] 唐长文[1] 闵昊[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《Journal of Semiconductors》2006年第9期1690-1694,共5页半导体学报（英文版）

摘　　要：从电磁理论出发解释了片上电感电流分配的原因,得出小横界面积金属的趋肤效应弱,大的金属线宽和相邻金属间距比的偶耦合临近效应小的结论.采用4层金属的0.35μm标准CMOS工艺制造片上电感,将差分电感的单电流路径,分成多电流路径并联,在保持了电感的电学对称性的前提下,抑制了电感的电流拥挤效应,电感的最大品质因数提高了40%,同时降低了其自谐振频率.From the view of the electromagnetic theory ,we examine the current redistributions of an inductor. We conclude that metal with a small cross-section has a weak skin effect and that inductors with a smaller ratio of the turn width to the space between turns have a weak proximity effect. The inductors are fabricated in 0.35μm four-metal CMOS technology. A turn of the differential inductor is divided into multi-shunt tracks, which keep the symmetry of the two ports of the inductor. Compared with a single-current-path configuration, the multi-current-path inductor offers a 40% greater maximum quality factor and a narrower range of operating frequencies,which we interpret here in detail.

关 键 词：片上电感 品质因数 趋肤效应 临近效应 多电流路径 自谐振频率 串联电阻 寄生电容 

分 类 号：TM55[电气工程—电器]