TiNiCu合金薄膜的制备及形状记忆性能  

Preparation and shape memory property of TiNiCu al- loy thin film

作　　者：卞铁荣[1,2] 李虹艳[1,2] 卢正欣[1,2] 高坤[1,2] 井晓天[1,2] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048 [2]西安理工大学现代分析测试中心,陕西西安710048

出　　处：《电镀与涂饰》2006年第9期13-15,共3页Electroplating & Finishing

摘　　要：采用镶嵌靶、通过直流磁控溅射法在不加热的情况下于硅基片上制备了Ti-49．57％Ni-5．6％Cu合金薄膜。XRD图谱表明,该薄膜为非晶态。对其进行的退火晶化后的形状记忆性能研究发现:薄膜分别经550℃×0．5 h、650℃×0．5 h晶化处理后无残余塑变存在下的最大恢复应力、最大恢复应变分别为180 MPa、2．7％;90 MPa、1．4％。A Ti-49.57% Ni-5.6% Cu alloy thin film was prepared on silicon chip with mosaic target by DC magnetron sputtering under non-heating condition. The thin film was proved to be amorphous by XRD spectrogram. The study results of the shape memory property of the film after annealing and crystallization show that the film has 180 MPa of maximum recovery stress and 2.7% of maximum recovery strain after crystallization treatment at 550℃ for 0.5 h under no remaining galling condition, while has 90 MPa of maximum recovery stress and 1.4% of maximum recovery strain after crystallization treatment at 650℃ for 0.5 h under no remaining galling condition.

关 键 词：硅基片 直流磁控溅射 TiNiCu薄膜 非晶态 晶化 退火 形状记忆 恢复应力 恢复应变 

分 类 号：TG139.6[一般工业技术—材料科学与工程]