AlGaInN四元系氮化物分离研究  

Studies on phase separation in AlGaIn quaternary alloys

作　　者：黄琨[1] 范广涵[1] 刘颂豪[1] 李述体[1] 郭志友[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《量子电子学报》2006年第5期714-718,共5页Chinese Journal of Quantum Electronics

摘　　要：氮基四元Ⅲ-Ⅴ族化合物可用于高亮度蓝光LED和高温、大功率及高频电子器件。可以通过改变AlxGayIn1-x-yN组分的大小,得到在与衬底品格匹配的情况下不同的材料禁带宽度,但是由于在给定组分下AlGaInN难以稳定生长。所以应用价力场模型(VFF)研究它的热动力稳定性,得出了AlGaInN不稳定的二相区间,并且定量讨论两种组分确定的AlGaInN合金的富In区与温度的关系。希望对生长高质量AlGaInN材料起到参考作用。Group-Ⅲ-nitride quaternary alloys are useful for blue high brightness light emitting devices and high-temperature, high-power, and high-frequency electronic devices. It is possible to change only the value of the band gap while keeping the lattice parameter at a constant value. The thermodynamical stability of these alloys is obtained analytically using the valence force field （VFF） model for wurtzite structures. The unstable two-phase regions for AlxGayIn1-x-yN quaternary alloys are calculated, and the formation of In-rich regions are studied with respects to In-In affinity. The calculated results can provide useful guidance in epitaxial growth of AlGaInN on GaN.

关 键 词：光电子学 相分离 价力场 AlxGayIn1-x-yN LED 

分 类 号：TN304.23[电子电信—物理电子学]