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作 者:杨治美[1] 余洲[2] 林海[1] 王帅[1] 钟志亲[1] 陈浩[2] 武展文[2] 孙小松[2] 晋勇[2] 何毅[3] 龚敏[1]
机构地区:[1]四川大学微电子技术四川省重点实验室,四川成都610064 [2]四川大学材料科学系,四川成都610064 [3]四川大学分析测试中心,四川成都610064
出 处:《光散射学报》2006年第3期271-276,共6页The Journal of Light Scattering
基 金:四川省科技厅应用基础研究项目(No.01GY051-21)
摘 要:本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。Nano zinc oxide were grown on n- Si (111) substrate by directly evaporating high pure zinc powder without employing catalyst at 800℃ in oxygen. The nano zinc - oxide were mainly tetrapod. The angles of the symbiotic T - ZnO nanowires were about 110°, the length was 1.5μm and the diameter was 100nm. Raman spectra analysis showed E2(H) existed in different kinds of zinc oxide; photoluminescence spectroscopy (PL) study was also employed, which indicated PL of zinc oxide related to both material property and defects of impurity, blue and green emission bands were originated from defects in ZnO.
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