n-GaN肖特基势垒二极管的高温电子辐照效应  

Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode

作　　者：谢宛玲[1] 杨治美[1] 钟志亲[1] 吴健[1] 林海[1] 马瑶[1] 袁菁[1] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学系微电子技术四川省重点实验室,成都610064

出　　处：《光散射学报》2006年第3期277-281,共5页The Journal of Light Scattering

摘　　要：本文研究了n-GaN肖特基势垒二极管的高温电子辐照效应。实验结果显示,高温下进行电子辐照,界面处辐照诱生缺陷会同时产生和被退火恢复;器件的击穿电压和反向漏电流受辐照影响减弱,其电学阈值增加;由辐照效应导致的可见光响应的影响仍然存在。Studies of the irradiation damage induced by high- temperature electron irradiation in n- type Au/GaN Schottky barrier diode are presented. During the high- temperature electron irradiation, induced- interface- states partly annealed off while they formed. It was detected that the influence of reverse breakdown voltage and reverse leakage current became small, but the influence of visible light was still survived .

关 键 词：GaN肖特基势垒二极管 高温 电子辐照 

分 类 号：O571.33[理学—粒子物理与原子核物理]