硼硅玻璃与硅阳极键合界面形成机理分析  

The mechanisms of anodic bonding between borosilicate glass and silicon

作　　者：秦会峰[1] 孟庆森[1] 宋永刚[1] 胡利方[1] 张惠轩[1] 

机构地区：[1]太原理工大学材料科学与工程学院,山西太原030024

出　　处：《功能材料》2006年第9期1369-1371,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50375105);山西省自然科学基金资助项目(20031051)

摘　　要：对硼硅玻璃与硅进行了阳极键合实验,通过扫描电镜对键合界面的微观结构进行分析表明:玻璃/硅的键合界面有明显的中间过渡层生成;分析认为电场力作用下玻璃耗尽层中的氧负离子向界面迁移扩散并与硅发生氧化反应是形成中间过渡层的主要原因,而界面过渡层的形成是硅/玻璃界面键合实现永久连接的直接原因。Anodic bonding of borosilicate glass/silicon was achieved, the microstructure of the bonding interface was analyzed by SEM. It indicates that transitional layer was formed at the bonding interface of borosilicate glass/silicon. It is believed that O^2- in the depletion of glass drifted to the interface and then reactive with the silicon is the main reason of anodic bonding under the electric field. It is assumed that formation of transitional layer is the direct reason of good bonding between silicon and glass.

关 键 词：阳极键合 硼硅玻璃 硅 过渡区 

分 类 号：TG453[金属学及工艺—焊接]