硅基高度择优取向PZT厚膜的制备及性能研究  

Fabrication and investigation of Si-based PZT thick films

作　　者：刘保亭[1] 程春生[1] 赵庆勋[1] 闫正[1] 马良[1] 李锋[1] 武德起[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《功能材料》2006年第9期1392-1394,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50572021);河北省自然科学基金资助项目(E2005000130);教育部留学回国人员科研启动基金资助项目(2005-546);河北大学基金资助项目(B0406030)

摘　　要：应用溶胶-凝胶法成功地在以SrTiO3(STO)为模板/阻挡层Si(001)基片上制备了La-Sr-Co-O/Pb(Zr0.5Ti0.5)O3(PZT)/La-Sr-Co-O/STO/Si异质结,PZT的厚度为0.8μm。研究了异质结的结构和性能。实验发现,PZT结晶良好、具有(001)高度择优取向以及较高的极化强度和较小的极化强度对脉冲宽度的依赖性;当外加电压为50V时,电阻率仍>108Ω.cm。La-Sr-Co-O/Pb（Ti0.5Ti0.5）O3（PZT）/La-Sr-Co-O/STO/Si heterostructure has been successfully fabricated on SrTiO3（STO）/Si（001） substrate using sol-gel method, in which the thickness of PZT film is 0.8μm. The structural and physical properties of La-Sr-Co-O/PZT/La-Sr-Co-O heterostructure are studied, and found that PZT capacitors, having both higher polarization and less pulse width dependence, is highly （001） oriented and well crystallinized. At 50V, the resistivity of PZT film is higher than 10^8Ω·cm which is favorable for future applications.

关 键 词：硅衬底 锆钛酸铅 溶胶-凝胶法 厚膜 

分 类 号：TN104.2[电子电信—物理电子学] O484[理学—固体物理]