高速大功率半导体开关RSD的di/dt耐量极限值  

The di/dt Limit Values of Hi-Speed and Hi-Power Semiconductor Switch RSD

作　　者：刘宝生[1] 余岳辉[1] 梁琳[1] 周郁明[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《通信电源技术》2006年第5期1-2,8,共3页Telecom Power Technology

基　　金：国家自然科学基金资助项目(50277016)

摘　　要：文章由等离子体双极漂移方程和临界预充电荷条件出发,得出高速大功率半导体开关RSD的di/dt耐量表达式。从外电路和器件结构本身两方面分析了RSD的di/dt耐量的影响因素,并提出了改善di/dt耐量的措施,测试结果证明了理论分析的正确性。We get the expression of di/dt bearing of pulsed power semiconductor switch RSD which is based on equation of plasma bipolar drift and the critical condition of stored charge. We analyzed the influence factors of di/dt bearing of RSD from two aspects of outer circuit and devices＇ own structure. Some measures which can improve di/dt bearing have been proposed. The testing results proved the theoretical analysis.

关 键 词：脉冲功率技术 RSD 半导体开关 di/dt特性 

分 类 号：TM564[电气工程—电器]