Structure and visible photoluminescence of Sm^3＋, Dy^3＋ and Tm^3＋ doped c-axis oriented AlN films  

作　　者：刘福生 刘泉林 梁敬魁 骆军 苏俊 张毅 孙宝娟 饶光辉 

机构地区：[1]Department of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China [3]Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China [4]International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China

出　　处：《Chinese Physics B》2006年第10期2445-2449,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 50372082）.

摘　　要：Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ^1D2 to ^3F4 and ^1G4 to ^3H6 intra 4f electron of Tm^3＋, the yellow emissions of AlN：Sm are due to ^4G5/2 to the ^6HJ （J=5/2, 7/2, 9/2, 11/2） and the reddish emissions of AlN：Dy correspond to the ^4F9/2 to ^6HJ （J=5/2, 13/2, 11/2 and 9/2） and ^6Fll/2 transitions.Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ^1D2 to ^3F4 and ^1G4 to ^3H6 intra 4f electron of Tm^3＋, the yellow emissions of AlN：Sm are due to ^4G5/2 to the ^6HJ （J=5/2, 7/2, 9/2, 11/2） and the reddish emissions of AlN：Dy correspond to the ^4F9/2 to ^6HJ （J=5/2, 13/2, 11/2 and 9/2） and ^6Fll/2 transitions.

关 键 词：PHOTOLUMINESCENCE Ⅲ-V semiconductor thin film growth 

分 类 号：O47[理学—半导体物理] O484.1[理学—物理]